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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology CT16G4SFRA266.C8FE 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Crucial Technology CT16G4SFRA266.C8FE 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4SFRA266.C8FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
37
62
左右 -68% 更低的延时
更快的读取速度,GB/s
15.3
7.4
测试中的平均数值
更快的写入速度,GB/s
11.5
5.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
37
读取速度,GB/s
7.4
15.3
写入速度,GB/s
5.9
11.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1612
2875
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Crucial Technology CT16G4SFRA266.C8FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M386B4G70DM0-CMA4 32GB
Gloway International (HK) STK4U2133D15081C 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT16G4SFRA266.C8FE 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA425S6BJR6N-UH 2GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9965639-002.A01G 8GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A4G43AB2-CVF 32GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M471A1K1KCB1-CRC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3333C16-16GTZKW 16GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMT64GX4M8C3200C16 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M471A2G43BB2-CWE 16GB
A-DATA Technology VDQVE1B16 2GB
Kingston KST-2133MHZ-4G 4GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9905599-025.A00G 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3000C14-16GTZR 16GB
Kingston 9965525-155.A00LF 8GB
Gloway International (HK) STK2133C15-8GB 8GB
报告一个错误
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Bug description
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