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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-4800C20-16GTZR 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-4800C20-16GTZR 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
G Skill Intl F4-4800C20-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4800C20-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
62
左右 -148% 更低的延时
更快的读取速度,GB/s
19.2
7.4
测试中的平均数值
更快的写入速度,GB/s
15.6
5.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-4800C20-16GTZR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
25
读取速度,GB/s
7.4
19.2
写入速度,GB/s
5.9
15.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1612
3803
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
G Skill Intl F4-4800C20-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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