Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Kingston XW21KG-HYD-NX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

Kingston XW21KG-HYD-NX 8GB

需要考虑的原因
Kingston XW21KG-HYD-NX 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 62

左右 -68% 更低的延时
更快的读取速度，GB/s

18.5 7.4

测试中的平均数值
更快的写入速度，GB/s

12.6 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Kingston XW21KG-HYD-NX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 37
读取速度，GB/s

7.4 18.5
写入速度，GB/s

5.9 12.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1612 3100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Corsair CMT16GX4M2C3200C16 8GB

Corsair CMT16GX4M2C3200C16 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Patriot Memory (PDP Systems) PSD48G213381 8GB

Patriot Memory (PDP Systems) PSD48G213381 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Mushkin 99[2/7/4]197F 8GB

Mushkin 99[2/7/4]197F 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB