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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
V-GEN D4M8GL26A8TS6 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs V-GEN D4M8GL26A8TS6 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
V-GEN D4M8GL26A8TS6 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
低于PassMark测试中的延时,ns
62
63
左右 2% 更低的延时
需要考虑的原因
V-GEN D4M8GL26A8TS6 8GB
报告一个错误
更快的读取速度,GB/s
17
7.4
测试中的平均数值
更快的写入速度,GB/s
8.8
5.9
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
V-GEN D4M8GL26A8TS6 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
63
读取速度,GB/s
7.4
17.0
写入速度,GB/s
5.9
8.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1612
2061
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
V-GEN D4M8GL26A8TS6 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Micron Technology 9ASF1G72PZ-2G3B1 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
报告一个错误
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Bug description
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