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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT16G4S24AM.M16FB 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology CT16G4S24AM.M16FB 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
总分
Crucial Technology CT16G4S24AM.M16FB 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4S24AM.M16FB 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
28
左右 -17% 更低的延时
更快的读取速度,GB/s
16.8
10.9
测试中的平均数值
更快的写入速度,GB/s
13.3
7.1
测试中的平均数值
更高的内存带宽,mbps
19200
8500
左右 2.26 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology CT16G4S24AM.M16FB 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
24
读取速度,GB/s
10.9
16.8
写入速度,GB/s
7.1
13.3
内存带宽,mbps
8500
19200
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1668
3009
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Crucial Technology CT16G4S24AM.M16FB 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Corsair CMU32GX4M2A2666C16 16GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
报告一个错误
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