Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB vs SK Hynix HMT425S6CFR6A-PB 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 32% 更低的延时
更快的读取速度，GB/s

10.5 10.1

测试中的平均数值
更快的写入速度，GB/s

8.4 7.1

测试中的平均数值

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 41
读取速度，GB/s

10.5 10.1
写入速度，GB/s

8.4 7.1
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1570 1484

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

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G Skill Intl F4-3200C14-16GTZSK 16GB