Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB vs Patriot Memory (PDP Systems) PSD416G266681 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

总分

Patriot Memory (PDP Systems) PSD416G266681 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

报告一个错误

Patriot Memory (PDP Systems) PSD416G266681 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G266681 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的读取速度，GB/s

14.9 4.8

测试中的平均数值
更快的写入速度，GB/s

10.2 4.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

4.8 14.9
写入速度，GB/s

4.5 10.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1046 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

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Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

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