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Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-3000C16-16GVRB 16GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs G Skill Intl F4-3000C16-16GVRB 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

总分
star star star star star
G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 31
    左右 3% 更低的延时
G Skill Intl F4-3000C16-16GVRB 16GB 需要考虑的原因
G Skill Intl F4-3000C16-16GVRB 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 5.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6
G Skill Intl F4-3000C16-16GVRB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 31
  • 读取速度，GB/s
    8.6 left arrow 16.9
  • 写入速度，GB/s
    5.4 left arrow 13.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1344 left arrow 3300

Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM的比较

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-3000C16-16GVRB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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