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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information JM2666HSB-8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Transcend Information JM2666HSB-8G 8GB

总分
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Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

总分
star star star star star
Transcend Information JM2666HSB-8G 8GB

Transcend Information JM2666HSB-8G 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 31
    左右 3% 更低的延时
Transcend Information JM2666HSB-8G 8GB 需要考虑的原因
Transcend Information JM2666HSB-8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 5.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information JM2666HSB-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 31
  • 读取速度，GB/s
    8.6 left arrow 14.5
  • 写入速度，GB/s
    5.4 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1344 left arrow 2892

Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM的比较

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRR 8GB

Transcend Information JM2666HSB-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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