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Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Corsair CMY8GX3M2A2400C11 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB vs Corsair CMY8GX3M2A2400C11 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

总分
star star star star star
Corsair CMY8GX3M2A2400C11 4GB

Corsair CMY8GX3M2A2400C11 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
Corsair CMY8GX3M2A2400C11 4GB 需要考虑的原因
Corsair CMY8GX3M2A2400C11 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 8.3
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Corsair CMY8GX3M2A2400C11 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    12.8 left arrow 16.5
  • 写入速度，GB/s
    8.3 left arrow 10.7
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2186 left arrow 2691

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB RAM的比较

Samsung M378B5273DH0-CH9 4GB
SK Hynix HMT41GS6BFR8A-PB 8GB

Corsair CMY8GX3M2A2400C11 4GB RAM的比较

G Skill Intl F3-14900CL8-4GBXM 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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