Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
SK Hynix HMT351S6BFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB vs SK Hynix HMT351S6BFR8C-H9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

总分
star star star star star
SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 49
    左右 51% 更低的延时
  • 更快的读取速度,GB/s
    15.5 left arrow 8.2
    测试中的平均数值
  • 更快的写入速度,GB/s
    8.8 left arrow 5.2
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    24 left arrow 49
  • 读取速度,GB/s
    15.5 left arrow 8.2
  • 写入速度,GB/s
    8.8 left arrow 5.2
  • 内存带宽,mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2444 left arrow 1223
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较