RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3600C16-8GTZKK 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
G Skill Intl F4-3600C16-8GTZKK 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
18.6
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C16-8GTZKK 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
65
左右 -141% 更低的延时
更快的写入速度,GB/s
16.6
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
27
读取速度,GB/s
3,580.8
18.6
写入速度,GB/s
1,592.0
16.6
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3938
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB RAM的比较
Kingston 9965640-016.A00G 32GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZKK 8GB
Samsung M378B5273DH0-CH9 4GB
Kingston 99U5474-037.A00LF 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMH128GX4M4E3200C16 32GB
Kingston KHX1866C9D3/8GX 8GB
Kingston 99U5700-010.A00G 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3466C16-4GVK 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4X8GE2666C16K8 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2400C16-8GRSB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905625-066.A00G 16GB
Corsair CMD16GX3M2A1866C9 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Kingston 9905471-002.A00LF 2GB
Kingston XW21KG-MIE-NX 8GB
报告一个错误
×
Bug description
Source link