Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-4133C19-8GTZA 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-4133C19-8GTZA 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值

G Skill Intl F4-4133C19-8GTZA 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZA 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 -132% 更低的延时
更快的写入速度，GB/s

12.2 1,592.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-4133C19-8GTZA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 28
读取速度，GB/s

3,580.8 17.3
写入速度，GB/s

1,592.0 12.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 3209

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMT16GX4M2K4266C19 8GB

Corsair CMT16GX4M2K4266C19 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston 99U5702-089.A00G 8GB

Kingston 99U5702-089.A00G 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston MSI24D4S7S7MH-16 16GB

Kingston MSI24D4S7S7MH-16 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F4-4000C19-8GTZKW 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C16-32GTZR 32GB

G Skill Intl F4-3200C16-32GTZR 32GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston MSI24D4S7S7MH-16 16GB

Kingston MSI24D4S7S7MH-16 16GB