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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Samsung 18ASF1G72PDZ-2G1B1 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
65
左右 -103% 更低的延时
更快的读取速度,GB/s
9.8
3
测试中的平均数值
更快的写入速度,GB/s
8.6
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
32
读取速度,GB/s
3,580.8
9.8
写入速度,GB/s
1,592.0
8.6
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
2271
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung 18ASF1G72PDZ-2G1B1 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C14-16GTZN 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD64GX4M4A2666C15 16GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905625-139.A00G 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2400C16-4GFX 4GB
Kingston 9965525-018.A00LF 4GB
Shenzhen Technology Co Ltd 8GB
A-DATA Technology DDR3 1333G 2GB
Kingston 9965669-017.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair MK16GX44B3000C15 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA425S6BJR6N-UH 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4266C17-16GTRGB 16GB
报告一个错误
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Bug description
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