Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMD16GX4M4B2400C10 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMD16GX4M4B2400C10 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 4% 更低的延时
更快的读取速度，GB/s

16 13.7

测试中的平均数值
更快的写入速度，GB/s

12.5 10.2

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Corsair CMD16GX4M4B2400C10 4GB

需要考虑的原因
Corsair CMD16GX4M4B2400C10 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMD16GX4M4B2400C10 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 25
读取速度，GB/s

16.0 13.7
写入速度，GB/s

12.5 10.2
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4B.8FE 8GB

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Kingston KKRVFX-MIE 8GB

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Lexar Co Limited LD4AS008G-H2666GST 8GB

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Kingston HX426C16FB2/8-SP 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F4-3600C16-8GTZNC 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

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Kingston 9905474-019.A00LF 2GB

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Transcend Information AQD-SD4U8GE21-SG 8GB

Crucial Technology CT102464BF160B-16F 8GB

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