RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT4G4SFS8213.C8FBR2 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
31
左右 23% 更低的延时
更快的读取速度,GB/s
16
12.9
测试中的平均数值
更快的写入速度,GB/s
12.5
11.4
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
31
读取速度,GB/s
16.0
12.9
写入速度,GB/s
12.5
11.4
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2136
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905599-020.A00G 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Kingston K1N7HK-ELC 2GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Corsair CML8GX3M2A1866C9 4GB
Kingston 9905744-077.A00G 16GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-3600C18-8GTZR 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
JUHOR JHD3000U1908JG 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CB16GS2666.C8ET 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G30C15U4W.8FE 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
报告一个错误
×
Bug description
Source link