RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C15-4GVR 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C15-4GVR 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2666C15-4GVR 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
31
左右 23% 更低的延时
更快的写入速度,GB/s
12.5
12.1
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2666C15-4GVR 4GB
报告一个错误
更快的读取速度,GB/s
16.9
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C15-4GVR 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
31
读取速度,GB/s
16.0
16.9
写入速度,GB/s
12.5
12.1
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2577
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2666C15-4GVR 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK16GX4M2C3600C20 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3000C15-8GTZR 8GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Samsung M4 70T2953EZ3-CE6 1GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-4000C18-8GTRS 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK16GX4M1D3000C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
AMD R5S38G1601U2S 8GB
Samsung V-GeN D4S4GL32A8TL 4GB
Kingston KP4T2F-PSB 4GB
Kingston KMKYF9-MID 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston KHX2400C15D4/16GX 16GB
Kingston 9965525-155.A00LF 8GB
Avant Technology W642GU42J5213N8 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
报告一个错误
×
Bug description
Source link