Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2666C19-16GIS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C19-16GIS 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 34

左右 29% 更低的延时

G Skill Intl F4-2666C19-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2666C19-16GIS 16GB

报告一个错误

更快的读取速度，GB/s

16.5 16

测试中的平均数值
更快的写入速度，GB/s

12.8 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2666C19-16GIS 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 34
读取速度，GB/s

16.0 16.5
写入速度，GB/s

12.5 12.8
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 3193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Transcend Information JM3200HLB-16GK 8GB

Transcend Information JM3200HLB-16GK 8GB

Kingston ASU16D3LS1KFG/4G 4GB

Kingston ASU16D3LS1KFG/4G 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Essencore Limited KD48GU881-26N190A 8GB

Essencore Limited KD48GU881-26N190A 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C11-8GTXD 8GB

G Skill Intl F3-2666C11-8GTXD 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Apacer Technology GD2.1527WH.002 8GB

Apacer Technology GD2.1527WH.002 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Samsung M393B1K70CHD-CH9 8GB

Samsung M393B1K70CHD-CH9 8GB

Kingston CBD24D4S7D8MB-16 16GB

Kingston CBD24D4S7D8MB-16 16GB