RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
86
左右 72% 更低的延时
更快的读取速度,GB/s
16
12.1
测试中的平均数值
更快的写入速度,GB/s
12.5
5.7
测试中的平均数值
需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
86
读取速度,GB/s
16.0
12.1
写入速度,GB/s
12.5
5.7
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
1220
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT8G48C40U5.M4A1 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
A-DATA Technology AD73I1C1674EV 4GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology GD2.1831WS.001 16GB
Crucial Technology CT102464BF160B.C16 8GB
Golden Empire CL16-20-20 D4-3200 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK64GX4M4B3333C16 16GB
Kingston 99U5403-036.A00G 4GB
Panram International Corporation PUD42133C154G2VS 4GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology D22.2221ZA.001 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Team Group Inc. Team-Elite-1333 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KVR26N19D8/16 16GB
报告一个错误
×
Bug description
Source link