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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) 2400 C17 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 73
    左右 67% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 7.8
    测试中的平均数值
Patriot Memory (PDP Systems) 2400 C17 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 2400 C17 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 73
  • 读取速度，GB/s
    16.0 left arrow 14.4
  • 写入速度，GB/s
    12.5 left arrow 7.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 1842

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Patriot Memory (PDP Systems) 2400 C17 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
内存RAM
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.C16F 4GB
Kingston MSI16D3LS1KBG/4G 4GB
Kingston MSI16D3LS1KBG/4G 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMWX8GD3600C18W2D 8GB
Corsair CMWX8GD3600C18W2D 8GB
内存RAM
Kingston SNY1333D3S9ELC/4G 4GB
Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston LV36D4U1S8HD-8XR 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMD32GX4M4B3733C17 8GB
Corsair CMD32GX4M4B3733C17 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA84GR7AFR4N-VK 32GB
SK Hynix HMA84GR7AFR4N-VK 32GB
内存RAM