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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M391A2K43BB1-CPB 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M391A2K43BB1-CPB 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M391A2K43BB1-CPB 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
34
左右 29% 更低的延时
更快的读取速度,GB/s
16
14.9
测试中的平均数值
更快的写入速度,GB/s
12.5
11.7
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Samsung M391A2K43BB1-CPB 16GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M391A2K43BB1-CPB 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
34
读取速度,GB/s
16.0
14.9
写入速度,GB/s
12.5
11.7
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3075
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M391A2K43BB1-CPB 16GB RAM的比较
Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M391A2K43BB1-CPB 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMU32GX4M4A2666C16 8GB
AMD AE34G1601U1 4GB
Corsair CMK16GX4M2F4400C19 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMT64GX4M4C3000C15 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905701-017.A00G 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C16-16GTZA 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Samsung M393B5170FH0-CK0 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Samsung M393B1K70CH0-CH9 8GB
Mushkin MRA4S300GJJM16G 16GB
报告一个错误
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Bug description
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