RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M47472K43DB1-CTD 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M47472K43DB1-CTD 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M47472K43DB1-CTD 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更快的读取速度,GB/s
16
15.5
测试中的平均数值
更快的写入速度,GB/s
12.5
8.0
测试中的平均数值
需要考虑的原因
Samsung M47472K43DB1-CTD 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
24
左右 -4% 更低的延时
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M47472K43DB1-CTD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
23
读取速度,GB/s
16.0
15.5
写入速度,GB/s
12.5
8.0
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
2414
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M47472K43DB1-CTD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.CAGNT.AR40B 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905734-018.A00G 16GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3466C16-4GVK 4GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Samsung M471B5273CH0-CH9 4GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix HMA82GS6AFRFR-UH 16GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2400C17-8GISM 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston HP26D4U9S1ME-4 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
Crucial Technology CT25664AA800.M16FM 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT51264BA1339.D16F 4GB
Apacer Technology 78.C2GFP.C700B 8GB
报告一个错误
×
Bug description
Source link