Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Team Group Inc. DDR4 2666 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Team Group Inc. DDR4 2666 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 14% 更低的延时
更快的读取速度，GB/s

16 13

测试中的平均数值
更快的写入速度，GB/s

12.5 10.4

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Team Group Inc. DDR4 2666 8GB

需要考虑的原因
Team Group Inc. DDR4 2666 8GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Team Group Inc. DDR4 2666 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 28
读取速度，GB/s

16.0 13.0
写入速度，GB/s

12.5 10.4
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

INTENSO 5641162 8GB

INTENSO 5641162 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Avant Technology J644GU44J9266NF 32GB

Avant Technology J644GU44J9266NF 32GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Corsair CMK16GX4M2Z3600C14 8GB

Corsair CMK16GX4M2Z3600C14 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMK16GX4M4B3400C16 4GB

Corsair CMK16GX4M4B3400C16 4GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB