Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Crucial Technology BLE8G4D26AFEA.16FAD 8GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

报告一个错误

更快的读取速度，GB/s

16.4 10.1

测试中的平均数值
更快的写入速度，GB/s

12.1 6.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

10.1 16.4
写入速度，GB/s

6.2 12.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1411 2988

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-3600C17-16GTZ 16GB

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SK Hynix HMA41GR7MFR8N-TF 8GB

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Kingston 9905598-019.A00G 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

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Kingston 99U5403-036.A00G 4GB

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Kingston 9905744-062.A00G 32GB

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-3333C16-4GRRD 4GB

G Skill Intl F4-3333C16-4GRRD 4GB