Kingmax Semiconductor FLFE85F-C8KM9 2GB vs G Skill Intl F4-2800C16-4GRR 4GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

G Skill Intl F4-2800C16-4GRR 4GB

需要考虑的原因
G Skill Intl F4-2800C16-4GRR 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

15.7 11.9

测试中的平均数值
更快的写入速度，GB/s

12.2 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-2800C16-4GRR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

11.9 15.7
写入速度，GB/s

7.6 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1610 2871

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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Kingston 99U5701-036.A00G 16GB

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Crucial Technology CT16G4SFDFD4A.M16FH 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMW32GX4M4Z2933C16 8GB

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Kingston X75V1H-MIE 32GB

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Peak Electronics 256X64M-67E 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Crucial Technology CT16G4SFRA32A.M16FR 16GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Maxsun MSD48G30M3 8GB

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A-DATA Technology DDR3 1600 4GB

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Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Apacer Technology GD2.1527WE.001 8GB

Apacer Technology GD2.1527WE.001 8GB