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Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3600C14-16GTZR 16GB
比较
Kingmax Semiconductor FLFE85F-C8KM9 2GB vs G Skill Intl F4-3600C14-16GTZR 16GB
总分
Kingmax Semiconductor FLFE85F-C8KM9 2GB
总分
G Skill Intl F4-3600C14-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C14-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 -4% 更低的延时
更快的读取速度,GB/s
25.6
11.9
测试中的平均数值
更快的写入速度,GB/s
20.7
7.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3600C14-16GTZR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
25
读取速度,GB/s
11.9
25.6
写入速度,GB/s
7.6
20.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1610
4537
Kingmax Semiconductor FLFE85F-C8KM9 2GB RAM的比较
Samsung M378B5673EH1-CH9 2GB
Kingston KHX2400C15/8G 8GB
G Skill Intl F4-3600C14-16GTZR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-028.A00LF 4GB
Samsung M471A5143SB1-CRC 4GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3600C16-16GTRGC 16GB
Kingston 99U5471-056.A00LF 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2400C17-4GFX 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston KHX2400C15D4/16GX 16GB
Kingston 99U5471-012.A00LF 4GB
Corsair CMK16GX4M4B3733C17 4GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston 99U5403-465.A00LF 8GB
Kingston HP32D4S2S1ME-4 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9905630-051.A00G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information TS1GLH64V4B 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2133C13S4/8G 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
AMD R538G1601U2S-UO 8GB
Kingston KV0M5R-HYD 8GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
报告一个错误
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Bug description
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