RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingmax Semiconductor FLFF65F-C6NG9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
比较
Kingmax Semiconductor FLFF65F-C6NG9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
总分
Kingmax Semiconductor FLFF65F-C6NG9 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Kingmax Semiconductor FLFF65F-C6NG9 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
73
左右 -217% 更低的延时
更快的读取速度,GB/s
17.5
6.2
测试中的平均数值
更快的写入速度,GB/s
14.6
3.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingmax Semiconductor FLFF65F-C6NG9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
73
23
读取速度,GB/s
6.2
17.5
写入速度,GB/s
3.4
14.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
965
3260
Kingmax Semiconductor FLFF65F-C6NG9 4GB RAM的比较
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Kingston 99U5700-014.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Kingmax Semiconductor FLFF65F-C6NG9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M393A5143DB0-CRC 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-2800C15-8GRK 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMD64GX4M4C3200C16 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Samsung M471B5173QH0-YK0 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMW16GX4M2Z4000C18 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2133C15-8GVK 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
报告一个错误
×
Bug description
Source link