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Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M393A2G40EB1-CPB 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Samsung M393A2G40EB1-CPB 16GB

总分
star star star star star
Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分
star star star star star
Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异 规格 评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB 需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB
报告一个错误
Samsung M393A2G40EB1-CPB 16GB 需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    56 left arrow 61
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    9.3 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.7 left arrow 1,670.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M393A2G40EB1-CPB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 56
  • 读取速度，GB/s
    3,529.3 left arrow 9.3
  • 写入速度，GB/s
    1,670.4 left arrow 7.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    517 left arrow 2200

Kingmax Semiconductor KLDD48F-B8KU5 1GB RAM的比较

Kingmax Semiconductor KLDD48F-A8KB5 1GB
Patriot Memory (PDP Systems) PSD21G800816 1GB

Samsung M393A2G40EB1-CPB 16GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Mushkin MR[A/B]280HHHH16G 16GB
Mushkin MR[A/B]280HHHH16G 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX4M2B3733C17 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM