Kingston 2GB-DDR2 800Mhz 2GB vs Corsair CMK16GX4M2B4266C19 8GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 15.7

测试中的平均数值
更快的写入速度，GB/s

2,160.7 12.8

测试中的平均数值

Corsair CMK16GX4M2B4266C19 8GB

需要考虑的原因
Corsair CMK16GX4M2B4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMK16GX4M2B4266C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

5,987.5 15.7
写入速度，GB/s

2,160.7 12.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

957 3035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Corsair CMK64GX4M2D3600C18 32GB

Corsair CMK64GX4M2D3600C18 32GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393A2K43CB1-CRC 16GB

Samsung M393A2K43CB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Transcend Information JM2666HSB-8G 8GB

Transcend Information JM2666HSB-8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB