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Kingston 9905403-038.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
比较
Kingston 9905403-038.A00G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
Kingston 9905403-038.A00G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-038.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 4% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
更快的读取速度,GB/s
16.8
12.9
测试中的平均数值
更快的写入速度,GB/s
13.5
8.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-038.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
26
读取速度,GB/s
12.9
16.8
写入速度,GB/s
8.5
13.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2164
2880
Kingston 9905403-038.A00G 4GB RAM的比较
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2400C17-8GSXK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMZ16GX3M2A1866C9 8GB
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G Skill Intl F4-3200C16-8GTZKY 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Samsung M393B1K70CH0-CH9 8GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
报告一个错误
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Bug description
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