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Kingston 9905403-038.A00LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
比较
Kingston 9905403-038.A00LF 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
总分
Kingston 9905403-038.A00LF 4GB
总分
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-038.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
37
左右 3% 更低的延时
需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
更快的读取速度,GB/s
16
13
测试中的平均数值
更快的写入速度,GB/s
12.6
8.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-038.A00LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
37
读取速度,GB/s
13.0
16.0
写入速度,GB/s
8.0
12.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2268
2808
Kingston 9905403-038.A00LF 4GB RAM的比较
Kingston 99U5402-052.A00LF 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HMA84GL7AMR4N-TF 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C16-8GTZN 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD16GX4M4A2800C16 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMR16GX4M2K4266C19 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston HX424C15PB/4 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
报告一个错误
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Bug description
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