RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9905403-061.A00LF 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
比较
Kingston 9905403-061.A00LF 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
总分
Kingston 9905403-061.A00LF 2GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
57
左右 -104% 更低的延时
更快的读取速度,GB/s
18.1
6.8
测试中的平均数值
更快的写入速度,GB/s
14.8
5.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
57
28
读取速度,GB/s
6.8
18.1
写入速度,GB/s
5.5
14.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1244
3564
Kingston 9905403-061.A00LF 2GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2800C16-4GVR 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Panram International Corporation PUD42133C158G2VS 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Asgard VMA45UG-MEC1U2AW1 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Mushkin 991586 2GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M378B5173BH0-CH9 4GB
Kingston MSI24D4S7S8MB-8 8GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMK16GX4M2F4400C19 8GB
Kingston 99U5428-018.A00LF 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMW16GX4M2C3600C18 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C15-16GVR 16GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-4800C19-8GTZRC 8GB
报告一个错误
×
Bug description
Source link