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Kingston 9905403-061.A00LF 2GB
Kingston KHX2400C15D4/16GX 16GB

Kingston 9905403-061.A00LF 2GB vs Kingston KHX2400C15D4/16GX 16GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Kingston KHX2400C15D4/16GX 16GB

Kingston KHX2400C15D4/16GX 16GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Kingston KHX2400C15D4/16GX 16GB 需要考虑的原因
Kingston KHX2400C15D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 57
    左右 -111% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Kingston KHX2400C15D4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 27
  • 读取速度，GB/s
    6.8 left arrow 16.4
  • 写入速度，GB/s
    5.5 left arrow 12.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3372

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Kingston KHX2400C15D4/16GX 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston KHX2400C15D4/16GX 16GB
Kingston KHX2400C15D4/16GX 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Samsung M471A5143EB1-CRC 4GB
Samsung M471A5143EB1-CRC 4GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM