Kingston 9905403-061.A00LF 2GB vs Samsung M471A1A43DB0-CPB 8GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Samsung M471A1A43DB0-CPB 8GB

Samsung M471A1A43DB0-CPB 8GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Samsung M471A1A43DB0-CPB 8GB

需要考虑的原因
Samsung M471A1A43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 57

左右 -111% 更低的延时
更快的读取速度，GB/s

12.3 6.8

测试中的平均数值
更快的写入速度，GB/s

6.4 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Samsung M471A1A43DB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 27
读取速度，GB/s

6.8 12.3
写入速度，GB/s

5.5 6.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 1732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Essencore Limited IM48GS88N26-JJJHA0 8GB

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Kllisre KRE-D3U1600M/8G 8GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair CMR32GX4M4C3200C16 8GB

Corsair CMR32GX4M4C3200C16 8GB