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Kingston 9905403-061.A00LF 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
比较
Kingston 9905403-061.A00LF 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
总分
Kingston 9905403-061.A00LF 2GB
总分
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
57
73
左右 22% 更低的延时
需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
更快的读取速度,GB/s
15.1
6.8
测试中的平均数值
更快的写入速度,GB/s
7.9
5.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
57
73
读取速度,GB/s
6.8
15.1
写入速度,GB/s
5.5
7.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1244
1724
Kingston 9905403-061.A00LF 2GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMW32GX4M4Z2933C16 8GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMSX16GX4M2A2666C18 8GB
Kingston 9905403-061.A00LF 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905625-076.A00G 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3000C16-8GVSB 8GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Kingston 9905471-002.A00LF 2GB
Samsung M471A1K1KBB0-CPB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 2800 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C15-16GTZKO 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 99U5711-001.A00G 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Samsung M386B4G70DM0-CMA4 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
报告一个错误
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Bug description
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