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Kingston 9905403-090.A01LF 4GB
AMD R744G2606U1S 4GB

Kingston 9905403-090.A01LF 4GB vs AMD R744G2606U1S 4GB

总分
star star star star star
Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异 规格 评论

差异

Kingston 9905403-090.A01LF 4GB 需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 76
    左右 64% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 8.7
    测试中的平均数值
AMD R744G2606U1S 4GB 需要考虑的原因
AMD R744G2606U1S 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
AMD R744G2606U1S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 76
  • 读取速度，GB/s
    13.9 left arrow 15.7
  • 写入速度，GB/s
    8.9 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2418 left arrow 1809

Kingston 9905403-090.A01LF 4GB RAM的比较

Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB

AMD R744G2606U1S 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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AMD R744G2606U1S 4GB
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内存RAM
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Kingston 9965662-012.A01G 16GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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内存RAM
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内存RAM
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内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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内存RAM