Kingston 9905403-156.A00LF 2GB vs G Skill Intl F4-3200C16-16GTZN 16GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 30

左右 40% 更低的延时

G Skill Intl F4-3200C16-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZN 16GB

报告一个错误

更快的读取速度，GB/s

17.8 17.7

测试中的平均数值
更快的写入速度，GB/s

14.3 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3200C16-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 30
读取速度，GB/s

17.7 17.8
写入速度，GB/s

13.1 14.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 3568

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965516-049.A00LF 8GB

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Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

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Kingston 99U5428-040.A00LF 4GB

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Kingston 99U5469-045.A00LF 4GB

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Kingston 9905625-152.A00G 16GB