RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9905403-447.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
比较
Kingston 9905403-447.A00LF 4GB vs Micron Technology 8ATF1G64HZ-2G3B2 8GB
总分
Kingston 9905403-447.A00LF 4GB
总分
Micron Technology 8ATF1G64HZ-2G3B2 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-447.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
40
左右 10% 更低的延时
更快的读取速度,GB/s
13.7
13.4
测试中的平均数值
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B2 8GB
报告一个错误
更快的写入速度,GB/s
10.8
8.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-447.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
40
读取速度,GB/s
13.7
13.4
写入速度,GB/s
8.2
10.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2208
2495
Kingston 9905403-447.A00LF 4GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-467.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5471-012.A00 4GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Samsung M378T5663QZ3-CF7 2GB
Samsung M391A1K43BB2-CTD 8GB
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965640-013.A01G 32GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CMK16GX4M2B3333C16 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15-4GIS 4GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2666C15-4GVK 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4S240FSD.16FD 16GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
TwinMOS 8DHE3MN8-HATP 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Samsung M471B5173BH0-CK0 4GB
G Skill Intl F4-2933C14-8GTZRX 8GB
报告一个错误
×
Bug description
Source link