Samsung M393B5170FH0-CK0 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 27

左右 -50% 更低的延时
更快的读取速度，GB/s

20.4 11.8

测试中的平均数值
更快的写入速度，GB/s

17.2 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 18
读取速度，GB/s

11.8 20.4
写入速度，GB/s

7.3 17.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung M3 78T5663EH3-CF7 2GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston 9905700-012.A00G 8GB

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Corsair CM4X32GE2666C18S2 32GB

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Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB