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Kingston 9905469-143.A00LF 4GB
Micron Technology 16G2666CL19 16GB

Kingston 9905469-143.A00LF 4GB vs Micron Technology 16G2666CL19 16GB

总分
star star star star star
Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

总分
star star star star star
Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

差异 规格 评论

差异

Kingston 9905469-143.A00LF 4GB 需要考虑的原因
Kingston 9905469-143.A00LF 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.4 left arrow 8.2
    测试中的平均数值
Micron Technology 16G2666CL19 16GB 需要考虑的原因
Micron Technology 16G2666CL19 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston 9905469-143.A00LF 4GB
Micron Technology 16G2666CL19 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 24
  • 读取速度，GB/s
    13.2 left arrow 15.4
  • 写入速度，GB/s
    8.4 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2163 left arrow 2438

Kingston 9905469-143.A00LF 4GB RAM的比较

Kingston 9905469-124.A00LF 4GB
Kingston 9905469-107.A00LF 4GB

Micron Technology 16G2666CL19 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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内存RAM
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内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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内存RAM
Kingston 9965525-144.A00LF 8GB
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Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
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内存RAM