TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M391A1K43BB2-CTD 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值
更快的写入速度，GB/s

870.4 9.3

测试中的平均数值

Samsung M391A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M391A1K43BB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

64 87

左右 -36% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M391A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 64
读取速度，GB/s

3,155.6 17.5
写入速度，GB/s

870.4 9.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Corsair CM4B8G2J2666A15D 8GB

Corsair CM4B8G2J2666A15D 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMSX8GX4M1A2400C16 8GB

Corsair CMSX8GX4M1A2400C16 8GB

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Corsair CMK16GX4M4B3400C16 4GB

Corsair CMK16GX4M4B3400C16 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Maxsun MSD48G30Q3 8GB

Maxsun MSD48G30Q3 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB