Kingston 9905474-019.A00LF 2GB vs Crucial Technology BL8G36C16U4BL.M8FE1 8GB

总分

Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

总分

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

差异规格评论

差异

Kingston 9905474-019.A00LF 2GB

需要考虑的原因
Kingston 9905474-019.A00LF 2GB

报告一个错误

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G36C16U4BL.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

19.3 14.6

测试中的平均数值
更快的写入速度，GB/s

16.7 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905474-019.A00LF 2GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

14.6 19.3
写入速度，GB/s

7.8 16.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2207 3733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology CT4G4DFS824A.M8FB 4GB

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SK Hynix DDR2 800 2G 2GB

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G Skill Intl F4-2666C19-8GVR 8GB

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Samsung M471B5273DH0-CK0 4GB

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Kingston LV32D4U2S8HD-8X 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Kingston 9905471-002.A00LF 2GB

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Corsair CMD32GX4M4A2800C16 8GB

Corsair CMD32GX4M4A2800C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB