Samsung M393B5170FH0-CK0 4GB vs Essencore Limited KD48GU880-36A180Z 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Essencore Limited KD48GU880-36A180Z 8GB

需要考虑的原因
Essencore Limited KD48GU880-36A180Z 8GB

报告一个错误

更快的读取速度，GB/s

22.6 11.8

测试中的平均数值
更快的写入速度，GB/s

16.4 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Essencore Limited KD48GU880-36A180Z 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

11.8 22.6
写入速度，GB/s

7.3 16.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 3597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BF160B.C16 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston 9905663-008.A00G 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Micron Technology 18ASF1G72PZ-2G1A2 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Corsair CMX8GX3M2A1600C11 4GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16G

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB