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Kingston 9905702-010.A00G 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Kingston 9905702-010.A00G 8GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

总分
star star star star star
Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

差异 规格 评论

差异

Kingston 9905702-010.A00G 8GB 需要考虑的原因
Kingston 9905702-010.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 77
    左右 61% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 5.5
    测试中的平均数值
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
报告一个错误

规格

完整的技术规格清单
Kingston 9905702-010.A00G 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 77
  • 读取速度，GB/s
    15.6 left arrow 13.1
  • 写入速度，GB/s
    11.1 left arrow 5.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2792 left arrow 1440

Kingston 9905702-010.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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