Kingston 9965525-018.A00LF 4GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

G Skill Intl F4-4600C19-8GTZSWC 8GB

需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 27

左右 -69% 更低的延时
更快的读取速度，GB/s

22.3 13.2

测试中的平均数值
更快的写入速度，GB/s

21.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 16
读取速度，GB/s

13.2 22.3
写入速度，GB/s

8.6 21.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2196 3952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK64GX4M8A2666C16 8GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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Eudar Technology Inc. 8GXMP3000CL16 8GB

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Kingston HP26D4S9D8MJ-16 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 99U5474-010.A00LF 2GB

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Samsung M471A2K43DB1-CTD 16GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Kingston MSI26D4S9S8ME-8 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CMU32GX4M4C3200C16 8GB

Corsair CMU32GX4M4C3200C16 8GB