Kingston 9965525-018.A00LF 4GB vs Samsung M378A1G44AB0-CWE 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Samsung M378A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16.5 13.2

测试中的平均数值
更快的写入速度，GB/s

10.9 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Samsung M378A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

13.2 16.5
写入速度，GB/s

8.6 10.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2196 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMWX8GF2933Z19W8 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CMK4GX4M1A2400C14 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9965589-035.D00G 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston 9932291-002.A00G 4GB

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A-DATA Technology DDR3 1333G 2GB

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Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB