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Kingston 99U5403-036.A00G 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
比较
Kingston 99U5403-036.A00G 4GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB
总分
Kingston 99U5403-036.A00G 4GB
总分
Micron Technology 9ASF51272PZ-2G3B1 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5403-036.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
53
左右 53% 更低的延时
更快的读取速度,GB/s
15.7
10.1
测试中的平均数值
更快的写入速度,GB/s
9.8
8.0
测试中的平均数值
需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston 99U5403-036.A00G 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
53
读取速度,GB/s
15.7
10.1
写入速度,GB/s
9.8
8.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2388
2319
Kingston 99U5403-036.A00G 4GB RAM的比较
Kingston 9905403-447.A00LF 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BLT8G4D30AETA.K16FE 8GB
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A-DATA Technology AM1P26KC4U1-BACS 4GB
Samsung M471B5273CH0-CH9 4GB
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Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Samsung M393B1G70BH0-CK0 8GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
报告一个错误
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Bug description
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