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Kingston 99U5403-468.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
比较
Kingston 99U5403-468.A00LF 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Kingston 99U5403-468.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5403-468.A00LF 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 -4% 更低的延时
更快的读取速度,GB/s
16
12.7
测试中的平均数值
更快的写入速度,GB/s
12.5
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 99U5403-468.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
24
读取速度,GB/s
12.7
16.0
写入速度,GB/s
8.6
12.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2298
2925
Kingston 99U5403-468.A00LF 8GB RAM的比较
Samsung M378B5173QH0-CK0 4GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-2400C15-8GRR 8GB
Samsung M471B5173QH0-YK0 4GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kllisre M378A5143EB2-CRC 4GB
Kingston K1N7HK-ELC 2GB
Corsair CMU16GX4M2C3200C16 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CM4X8GD3000C16K4 8GB
Corsair CML8GX3M2A1600C9 4GB
Kingston 9905678-041.A00G 4GB
Kingston 99U5469-045.A00LF 4GB
Panram International Corporation PUD42133C158G2VS 8GB
报告一个错误
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Bug description
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