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Kingston 99U5428-101.A00LF 8GB
Samsung M378A1G44BB0-CWE 8GB

Kingston 99U5428-101.A00LF 8GB vs Samsung M378A1G44BB0-CWE 8GB

总分
star star star star star
Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

总分
star star star star star
Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

差异 规格 评论

差异

Kingston 99U5428-101.A00LF 8GB 需要考虑的原因
Kingston 99U5428-101.A00LF 8GB
报告一个错误
Samsung M378A1G44BB0-CWE 8GB 需要考虑的原因
Samsung M378A1G44BB0-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 80
    左右 -129% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 5.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 3.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston 99U5428-101.A00LF 8GB
Samsung M378A1G44BB0-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    80 left arrow 35
  • 读取速度，GB/s
    5.9 left arrow 15.1
  • 写入速度，GB/s
    3.4 left arrow 9.2
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    968 left arrow 2488

Kingston 99U5428-101.A00LF 8GB RAM的比较

Kingston 99U5428-100.A00LF 8GB
Corsair CMD8GX4M2B3866C18 4GB

Samsung M378A1G44BB0-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
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G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM