Kingston 99U5429-007.A00LF 2GB vs G Skill Intl F4-3200C16-8GSXWB 8GB

总分

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F4-3200C16-8GSXWB 8GB

差异规格评论

差异

Kingston 99U5429-007.A00LF 2GB

需要考虑的原因
Kingston 99U5429-007.A00LF 2GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值
更快的写入速度，GB/s

2,036.1 13.5

测试中的平均数值

G Skill Intl F4-3200C16-8GSXWB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSXWB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 75

左右 -178% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-007.A00LF 2GB

G Skill Intl F4-3200C16-8GSXWB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 27
读取速度，GB/s

3,986.4 18.0
写入速度，GB/s

2,036.1 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

714 3293

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMK16GX4M2C3000C16 8GB

Corsair CMK16GX4M2C3000C16 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Hewlett-Packard 7EH61AA# 8GB

Hewlett-Packard 7EH61AA# 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Corsair CMK16GX4M2G4000C16 8GB

Corsair CMK16GX4M2G4000C16 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9905624-036.A00G 8GB

Kingston 9905624-036.A00G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB